Thermal equilibrium electronic properties of a-Si:H

Author

Street, Robert A.

Author_Institution

Xerox Palo Alto Res. Center, CA, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2770

Lastpage

2774

Abstract

Defect and donor states in a-Si:H are in thermal equilibrium above about 100°C, with concentrations that depend on temperature and the position of the Fermi energy. This interaction between the electronic and structural states has a profound effect on all the electronic properties. Some aspects of the thermodynamic model for the equilibrium state are reviewed and shown to explain the properties of doped and compensated a-Si:H and the temperature dependence of the defect density in undoped material. The different conductivity behavior of the low-temperature frozen state and the high-temperatures equilibrium are also explained

Keywords

Fermi level; amorphous semiconductors; carrier mobility; defect electron energy states; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; hydrogen; silicon; thermodynamic properties; Fermi energy; Si:H; amorphous semiconductor; conductivity behavior; defect density; defect state; donor states; drift mobility; electronic properties; equilibrium state; low-temperature frozen state; structural states; temperature dependence; thermal equilibrium; thermodynamic model; Annealing; Bonding; Conductivity; Doping; Hydrogen; Lighting; Metastasis; Paramagnetic resonance; Temperature; Thermodynamics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40935

Filename

40935