DocumentCode
1114353
Title
InGaAs/InP double-heterostructure bipolar transistors with near-ideal β versus IC characteristic
Author
Nottenburg, Richard N. ; Temkin, H. ; Panish, Morton B. ; Bhat, Rajaram ; Bischoff, J.C.
Author_Institution
Bell Communications Research, Murray Hill, NJ
Volume
7
Issue
11
fYear
1986
fDate
11/1/1986 12:00:00 AM
Firstpage
643
Lastpage
645
Abstract
InGaAs/InP double-heterostructure bipolar transistors (DHBT\´s) with current gain β ∼ 630 have been realized using gas-source molecular beam epitaxy (GSMBE). These devices exhibit near-ideal β versus IC characteristic (i.e., β independent of IC ) with a small-signal gain 
at 
nA. In comparison, we find 
for a high-quality AlGaAs/GaAs HBT grown by OMCVD. The higher emitter injection efficiency at low collector current levels found in the InGaAs/InP DHBT is due to at least a factor 100 smaller surface recombination current.
at nA. In comparison, we find for a high-quality AlGaAs/GaAs HBT grown by OMCVD. The higher emitter injection efficiency at low collector current levels found in the InGaAs/InP DHBT is due to at least a factor 100 smaller surface recombination current.Keywords
Bipolar integrated circuits; Bipolar transistors; Current measurement; Electron emission; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Spontaneous emission; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26504
Filename
1486327
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