Title :
Picosecond photocarrier transport in hydrogenated amorphous-silicon p-i-n diodes
Author :
Schiff, E.A. ; Grahn, H.T. ; Devlen, R.I. ; Tauc, J. ; Guha, S.
Author_Institution :
Dept. of Phys., Syracuse Univ., NY, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
Optically detected, picosecond-domain photocarrier transport measurements for hydrogenated amorphous silicon (a-Si:H) p-i-n diodes with uniform and nonuniform electric fields are reported. The transient electroabsorption bleaching mechanism for optical detection is described, and the interpretation of these transients is extended to the case of nonuniform electric fields. A technique for using surface-absorbed light and optical detection for measurement of nonuniform electric fields is presented
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; optical saturable absorption; p-i-n diodes; photoconductivity; photodiodes; silicon; Si:H diode; amorphous semiconductors; nonuniform electric fields; optical detection; p-i-n diodes; picosecond-domain photocarrier transport; transient electroabsorption bleaching mechanism; uniform electric field; Electric variables measurement; Electron mobility; Monitoring; Nonuniform electric fields; Optical pulses; Optical pumping; Optical sensors; P-i-n diodes; Photoconductivity; Physics;
Journal_Title :
Electron Devices, IEEE Transactions on
