DocumentCode
1114373
Title
Interpretation of transient currents in amorphous-silicon hydride p-i-n and n-i-n devices
Author
Shapiro, Finley R. ; Bar-Yam, Yaneer ; Silver, Marvin
Author_Institution
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA, USA
Volume
36
Issue
12
fYear
1989
fDate
12/1/1989 12:00:00 AM
Firstpage
2785
Lastpage
2788
Abstract
Transient current experiments on amorphous silicon hydride p-i-n and n-i-n devices were performed by M. Silver et al. (1986) as a means of studying the effects of localized states on charge transport in this material. However, some of the features of the observed current transients were not thoroughly understood. Here, simulations of these experiments are used to explain the experimental results and evaluate the parameter set used in the simulation
Keywords
amorphous semiconductors; elemental semiconductors; hydrogen; localised electron states; p-i-n diodes; semiconductor diodes; silicon; transients; Si:H device; amorphous semiconductors; charge transport; localized states; n-i-n devices; p-i-n devices; simulations; transient currents; Amorphous silicon; Charge carrier processes; Computational modeling; Current measurement; Extraterrestrial measurements; PIN photodiodes; Physics; Resistors; Silver; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.40938
Filename
40938
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