DocumentCode :
1114394
Title :
Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation
Author :
Fossum, Jerry G. ; Veeraraghavan, Surya
Author_Institution :
University of Florida, Gainesville, FL
Volume :
7
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
652
Lastpage :
654
Abstract :
The concept of partitioned-charge-based (PC) modeling of bipolar transistors is developed and demonstrated, and shown to be fundamentally superior to conventional quasi-static charge-control modeling, the basis of the common (capacitance-based) Gummel-Poon (GP) equivalent circuit. SPICE transient simulations with PC and GP models are contrasted to show a first-order accounting for non-quasi-static (NQS) delay in the PC model which is not accounted for in the GP model. Additional model contrasts in the small-signal domain, compared with exact ac solutions, confirm the superiority of the PC model, the characterization of which is in fact no more tedious than that of the GP model.
Keywords :
Bipolar transistors; Capacitance; Circuit simulation; Delay; Electron emission; Equivalent circuits; MOSFET circuits; Radiative recombination; Steady-state; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26508
Filename :
1486331
Link To Document :
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