• DocumentCode
    1114394
  • Title

    Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation

  • Author

    Fossum, Jerry G. ; Veeraraghavan, Surya

  • Author_Institution
    University of Florida, Gainesville, FL
  • Volume
    7
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    652
  • Lastpage
    654
  • Abstract
    The concept of partitioned-charge-based (PC) modeling of bipolar transistors is developed and demonstrated, and shown to be fundamentally superior to conventional quasi-static charge-control modeling, the basis of the common (capacitance-based) Gummel-Poon (GP) equivalent circuit. SPICE transient simulations with PC and GP models are contrasted to show a first-order accounting for non-quasi-static (NQS) delay in the PC model which is not accounted for in the GP model. Additional model contrasts in the small-signal domain, compared with exact ac solutions, confirm the superiority of the PC model, the characterization of which is in fact no more tedious than that of the GP model.
  • Keywords
    Bipolar transistors; Capacitance; Circuit simulation; Delay; Electron emission; Equivalent circuits; MOSFET circuits; Radiative recombination; Steady-state; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26508
  • Filename
    1486331