DocumentCode
1114394
Title
Partitioned-charge-based modeling of bipolar transistors for non-quasi-static circuit simulation
Author
Fossum, Jerry G. ; Veeraraghavan, Surya
Author_Institution
University of Florida, Gainesville, FL
Volume
7
Issue
12
fYear
1986
fDate
12/1/1986 12:00:00 AM
Firstpage
652
Lastpage
654
Abstract
The concept of partitioned-charge-based (PC) modeling of bipolar transistors is developed and demonstrated, and shown to be fundamentally superior to conventional quasi-static charge-control modeling, the basis of the common (capacitance-based) Gummel-Poon (GP) equivalent circuit. SPICE transient simulations with PC and GP models are contrasted to show a first-order accounting for non-quasi-static (NQS) delay in the PC model which is not accounted for in the GP model. Additional model contrasts in the small-signal domain, compared with exact ac solutions, confirm the superiority of the PC model, the characterization of which is in fact no more tedious than that of the GP model.
Keywords
Bipolar transistors; Capacitance; Circuit simulation; Delay; Electron emission; Equivalent circuits; MOSFET circuits; Radiative recombination; Steady-state; Voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1986.26508
Filename
1486331
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