Title :
Photoemission spectroscopy of heterojunctions of amorphous hydrogenated silicon with silicon oxide and nitride
Author :
Yang, Liyou ; Abeles, Benjamin ; Eberhardt, Wolfgang ; Sondericker, D.
Author_Institution :
Solarex Thin Film Div., Newtown, PA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A study of the growth and electronic structure of a-Si:H/a-SiNx:H and a-Si:H/a-SiOx:H heterojunctions by photoemission spectroscopy is discussed. The interfaces in a-Si:H/a-SiOx are atomically abrupt, except for the SiOx on the Si interface which is graded over ~3 Å due to plasma oxidation. The offset energies between the a-Si:H valence band and those of a-SiNx:H and a-SiOx:H are 1.2 and 4.0 eV, respectively. Extra H(~2×1015) is incorporated in the Si on the SiNx interface region. The hole wave functions in a-Si:H are localized on a scale of 1-2 interatomic distances
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; interface electron states; semiconductor-insulator boundaries; silicon; silicon compounds; ultraviolet photoelectron spectra; Si:H-SiNx:H heterojunction; Si:H-SiOx:H heterojunction; electronic structure; hole wave functions; offset energies; photoemission spectroscopy; plasma oxidation; semiconductor growth; valence band; Amorphous materials; Bonding; Buffer layers; Heterojunctions; Insulation; Photoelectricity; Plasma waves; Pollution measurement; Silicon compounds; Spectroscopy;
Journal_Title :
Electron Devices, IEEE Transactions on
