Space-charge photomodulation in metal/insulator/amorphous semiconductor structures [TFTs]

Author

Fortunato, Guglielmo ; Mariucci, Luigi ; Reita, Carlo ; Foglietti, P.

Author_Institution

Istituto di Elettronica dello Stato Solido, CNR, Rome, Italy

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2825

Lastpage

2828

Abstract

The space-charge density variation induced by illumination in metal-insulator-amorphous-semiconductor structures has been observed for the first time by monitoring the transient photocurrent. The dependence of the charge variation on the gate voltage provides a useful tool for the flatband voltage determination

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; insulated gate field effect transistors; metal-insulator-semiconductor structures; photoconductivity; silicon; space charge; thin film transistors; transients; Si:H; amorphous semiconductors; flatband voltage determination; gate voltage; illumination; inverted staggered TFT; metal-insulator-amorphous-semiconductor structures; space charge photomodulation; space-charge density; thin film transistor; transient photocurrent; Amorphous semiconductors; Channel bank filters; Conducting materials; Insulation; Metal-insulator structures; Photoconducting materials; Photoconductivity; Temperature measurement; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40943

Filename

40943