DocumentCode :
1114435
Title :
A two-dimensional analytical model of the cross-bridge Kelvin resistor
Author :
Schreyer, Tim A. ; Saraswat, Krishna C.
Author_Institution :
Stanford University, Stanford, CA
Volume :
7
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
661
Lastpage :
663
Abstract :
This paper presents an analytical model which correctly explains the two-dimensional (2-D) current-crowding effects observed in the cross-bridge Kelvin resistor (CBKR). The model explains that the kelvin resistance measured by this device consists of two components, one due to specific resistivity and the other due to current flowing in the overlap region between the contact and the diffusion edges. The geometrical dependence of this second component is derived analytically and compared with two-dimensional numerical simulations. It becomes significant when specific contact resistivity 
, where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and Rs is the diffusion sheet resistance.
, where δ is the amount of overlap between edge of the contact and the edge of the diffusion path, and RKeywords :
Analytical models; Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Geometry; Kelvin; Numerical simulation; Resistors; Two dimensional displays;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26511
Filename :
1486334
Link To Document :
