Title :
Bulk and surface properties of amorphous hydrogenated fluorinated silicon grown from SiF4 and H2
Author :
Maruyama, A. ; Shen, DaShen ; Chu, Virginia ; Liu, J.Z. ; Campbell, I. ; Fauchet, Phillipe M. ; Wagner, Sigurd
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A detailed study of the growth of amorphous hydrogenated fluorinated silicon (a-Si:H, F) from a DC glow discharge in SiF4 and H2 is discussed. The electrical properties of the films can be varied over a very wide range. The bulk properties of the best films that were measured included an Urbach energy Eu =43 meV, a deep-level defect density Ns=1.5×1015 cm-3, and a hole drift mobility of 8×10-3 cm2 V-1 s-1, which reflects a characteristic valence band energy of 36 meV. It was found that Eu, N s, and the density of surface states Nss are related to each other. Under the deposition condition of the films with the best bulk properties, Nss reaches its highest value of 1×1014 cm-2. It is suggested that in growth from SiF4/H2, the density of dangling bonds at the growing surface is very sensitive to the deposition conditions
Keywords :
Raman spectra of inorganic solids; X-ray diffraction examination of materials; amorphous semiconductors; carrier mobility; deep levels; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; fluorine; hydrogen; infrared spectra of inorganic solids; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; surface electron states; DC glow discharge growth; H2; IR absorption spectra; Raman spectrum; Si:H,F; SiF4; SiF4-H2; Urbach energy; X-ray diffraction; amorphous semiconductors; bulk properties; dangling bond density; dark conductivity; deep-level defect density; electrical properties; hole drift mobility; photoconductivity; photothermal spectroscopy; surface properties; surface states; valence band energy; Amorphous materials; Electromagnetic wave absorption; Glow discharges; Hydrogen; Mass spectroscopy; Optical films; Photoconductivity; Raman scattering; Silicon; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
