Title :
A new electromigration testing technique for rapid statistical evaluation of interconnect technology
Author :
Thompson, C.V. ; Cho, J.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
fDate :
12/1/1986 12:00:00 AM
Abstract :
We describe a test structure and a testing technique that allows simultaneous stressing of 50 or more parallel thin film lines of the same width. This technique allows determination of the mean time to electromigration-induced failure and the deviation in the time to failure in a single test. This technique allows more rapid statistical evaluation of new or modified interconnect technologies.
Keywords :
Circuit testing; Contact resistance; Current density; Electromigration; Monitoring; Optical films; Optical sensors; Temperature; Transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26513
