Small angle X-ray scattering from microvoids in the a-SiC:H alloy

Author

Mahan, A.H. ; Nelson, B.P. ; Crandall, R.S. ; Williamson, D.L.

Author_Institution

Solar Energy Res. Inst., Golden, CO, USA

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2859

Lastpage

2862

Abstract

Small-angle X-ray scattering (SAXS) measurements on a series of a-SiC:H alloy films deposited in a glow discharge reactor using SiH₄/CH₄ gas mixtures are discussed. It was found that the introduction of C into the a-Si matrix produces a large SAXS signal, which suggests a sizable microvoid density, and which further increases with increasing C content. A Guinier analysis shows that these microvoids are spherical and have an average radius of approximately 6 Å, which increases only slightly with C content. Other measurements (infrared, photoconductivity, film density, optical) made on identically prepared material are included to identify the possible origins of these microvoids and to determine how they affect material quality

Keywords

X-ray scattering; amorphous semiconductors; electrical conductivity of amorphous semiconductors and insulators; hydrogen; infrared spectra of inorganic solids; noncrystalline state structure; photoconductivity; photothermal spectroscopy; plasma CVD coatings; silicon compounds; voids (solid); Guinier analysis; IR spectra; SiC:H film; SiH₄; SiH₄-methane gas mixture; amorphous semiconductor; film density; glow discharge reactor; material quality; microvoid density; photoconductivity; photothermal deflection spectroscopy; small angle X-ray scattering; Density measurement; Glow discharges; Microstructure; Optical films; Optical materials; Optical scattering; Photoconducting materials; Photoconductivity; Radio frequency; X-ray scattering;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40947

Filename

40947