Title :
Performance of a high-resolution contact-type linear image sensor with a-Si:H/a-SiC:H heterojunction photodiodes
Author :
Kunii, Masafumi ; Hasegawa, Kazumasa ; Oka, Hideaki ; Nakazawa, Yoshio ; Takeshita, Tetsuy Oshi ; Kurihara, Hajime
Author_Institution :
Seiko Epson Corp., Nagano, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
A 400 DPI (dots-per-inch) contact-type linear image sensor with a scanning speed of 2 ms/line using amorphous silicon photodiodes and poly-Si thin-film transistor drivers has been developed. The characteristics of the heterojunction photodiodes are discussed, and the results of sensor performance tests are examined in terms of output signal uniformity, photoresponse lag, spectral response, gray scale, and the reliability of the 400 DPI image sensor
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; image sensors; photodiodes; semiconductor device testing; silicon; silicon compounds; Si:H-SiC:H heterojunction photodiodes; amorphous semiconductor; gray scale; high-resolution contact-type linear image sensor; photoresponse lag; reliability; scanning speed; sensor performance tests; spectral response; thin-film transistor drivers; Bonding; Dark current; Driver circuits; Electrodes; Heterojunctions; Image sensors; Photodiodes; Substrates; Thin film transistors; Wire;
Journal_Title :
Electron Devices, IEEE Transactions on
