Title :
The emitter-base interface current in silicon bipolar transistors with emitters deposited by plasma-enhanced CVD
Author :
Symons, J. ; Nijs, J. ; Mertens, Robert P.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
12/1/1989 12:00:00 AM
Abstract :
The DC characteristics of bipolar devices with emitters deposited by the glow discharge of silane are discussed. The emitter material can be amorphous or single crystalline, grown by low-temperature plasma epitaxy. At deposition temperatures as low as 320°C, surface cleaning is the most critical step in the process. Results on different ex-situ and in-situ cleanings are included. A model for the base current of bipolar transistors which is in agreement with the observations is proposed. It is shown that the base-emitter interface limits the transistor performance. After optimization, diode ideality factors approaching unity are obtained
Keywords :
bipolar transistors; contact resistance; elemental semiconductors; hydrogen; plasma CVD; semiconductor growth; silicon; vapour phase epitaxial growth; 320 C; DC characteristics; Si:H bipolar transistor; SiH4; contact resistance; deposition temperatures; diode ideality factors; emitter-base interface current; low-temperature plasma epitaxy; optimization; plasma-enhanced CVD; silane glow discharge; surface cleaning; Amorphous materials; Bipolar transistors; Cleaning; Crystalline materials; Crystallization; Glow discharges; Plasma devices; Plasma properties; Plasma temperature; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
