Amorphous-SiC thin-film p-i-n light-emitting diode using amorphous-SiN hot-carrier tunneling injection layers

Author

Paasche, Sascha M. ; Toyama, Toshihiko ; Okamoto, Hiroaki ; Hamakawa, Yoshihiro

Author_Institution

Fac. of Eng. Sci., Osaka Univ., Toyanaka, Japan

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2895

Lastpage

2902

Abstract

An approach to improve the luminosity of hydrogenated amorphous silicon carbide (a-SiC:H)-based thin-film visible light-emitting diodes is discussed. High bandgap near-stoichiometric hydrogenated amorphous silicon nitride (a-SiN:H) is utilized as a hot-carrier tunneling injection layer. An improvement of both carrier injection efficiency and luminosity is observed. Technical data on the new approach for carrier injection and on the recombination mechanism are presented. Preliminary results are also presented on the photoluminescence and electroluminescence properties of a-SiC:H/a-SiN:H multilayers

Keywords

amorphous semiconductors; electroluminescence; hydrogen; light emitting diodes; p-i-n diodes; photoluminescence; silicon compounds; SiC:H-SiN:H multilayers; amorphous SiC thin film p-i-n light emitting diode; amorphous-SiN hot-carrier tunneling injection layers; carrier injection efficiency; electroluminescence; luminosity; photoluminescence; recombination mechanism; semiconductors; Amorphous silicon; Hot carrier injection; Hot carriers; Light emitting diodes; PIN photodiodes; Photoluminescence; Photonic band gap; Semiconductor thin films; Transistors; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40952

Filename

40952