Title :
Fabrication of inversion-type n-channel MOSFET´s using cubic-SiC on Si
Author :
Shibahara, K. ; Saito, T. ; Nishino, S. ; Matsunami, H. ; Matsunami, H.
Author_Institution :
Kyoto University, Sakyo, Kyoto, Japan
fDate :
12/1/1986 12:00:00 AM
Abstract :
Inversion-type n-channel MOSFET´s of cubic-SiC were successfully fabricated. Cubic-SiC was grown on Si
Keywords :
Crystals; Fabrication; Ion implantation; Lattices; Oxidation; P-n junctions; Schottky barriers; Silicon carbide; Substrates; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1986.26522
