DocumentCode :
1114572
Title :
Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process
Author :
Eda, Kazuo ; Inada, Masanori ; Ota, Yorito ; Nakagawa, Atsushi ; Hirose, Takashi ; Yanagihara, Manabu
Author_Institution :
Matsushita Electric Industrial Company, Ltd., Osaka, Japan
Volume :
7
Issue :
12
fYear :
1986
fDate :
12/1/1986 12:00:00 AM
Firstpage :
694
Lastpage :
696
Abstract :
The first emitter-base-collector (EBC) self-aligned (SA) heterojunction bipolar transistors (HBT\´s) using wet etching process are described. This self-alignment fabrication technique is extremely simple but can get excellent high-frequency performance. An HBT with a 4-µm-wide emitter mesa showed 18 GHz of Ft and 13 GHz of 
. By optimizing this process, high-frequency operation above 40 GHz can be expected.
. By optimizing this process, high-frequency operation above 40 GHz can be expected.Keywords :
Bipolar transistors; Cutoff frequency; Electrodes; Electronic design automation and methodology; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Resists; Wet etching;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1986.26523
Filename :
1486346
Link To Document :
