• DocumentCode
    1114572
  • Title

    Emitter—Base—Collector self-aligned heterojunction bipolar transistors using wet etching process

  • Author

    Eda, Kazuo ; Inada, Masanori ; Ota, Yorito ; Nakagawa, Atsushi ; Hirose, Takashi ; Yanagihara, Manabu

  • Author_Institution
    Matsushita Electric Industrial Company, Ltd., Osaka, Japan
  • Volume
    7
  • Issue
    12
  • fYear
    1986
  • fDate
    12/1/1986 12:00:00 AM
  • Firstpage
    694
  • Lastpage
    696
  • Abstract
    The first emitter-base-collector (EBC) self-aligned (SA) heterojunction bipolar transistors (HBT\´s) using wet etching process are described. This self-alignment fabrication technique is extremely simple but can get excellent high-frequency performance. An HBT with a 4-µm-wide emitter mesa showed 18 GHz of Ftand 13 GHz of F_{\\max } . By optimizing this process, high-frequency operation above 40 GHz can be expected.
  • Keywords
    Bipolar transistors; Cutoff frequency; Electrodes; Electronic design automation and methodology; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Resists; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1986.26523
  • Filename
    1486346
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114572