A lateral COMFET made in thin silicon-on-insulator film

Lateral conductivity-modulated FET´s (COMFET´s) have been fabricated using a silicon-on-insulator (SOI) CMOS process. High-speed low-voltage CMOS and medium-voltage COMFET´s have thus been produced on the same chips. The COMFET´s have a 80-V blocking capability in both the forward and reverse modes. Turn-off times of a few microseconds are obtained, which is comparable to values obtained in bulk COMFET´s. Due to the thinness of the silicon film in which the devices are made, the linear current density is limited to approximately 10 µA/µm.