Electrical characteristics and thermally induced metastability in an amorphous-silicon ambipolar transistor

Author

Jang, Jin ; Chu, Hye Yong ; Lee, Yi Sang ; Lee, Choochon

Author_Institution

Dept. of Phys., Kyung Hee Univ., Seoul, South Korea

Volume

36

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2928

Lastpage

2934

Abstract

Electrical characteristics and thermally induced metastability in a boron-doped hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) deposited at 180°C are discussed. The on/off ratio of the conductance and the field-effect mobility are similar to those for undoped a-Si:H TFTs. The device characteristics exhibit n- and p-channel operations. The enhancement in the drain currents caused by double injections of electrons and holes appears for the p-channel operation of the TFT. Thermal quenching experiments on boron-doped a-Si:H silicon-nitride ambipolar TFTs give clear evidence of the coexistence of two distinct metastable changes: the metastable creation of the active dopants and dangling bonds appear to increase with quenching temperature

Keywords

amorphous semiconductors; boron; carrier mobility; dangling bonds; elemental semiconductors; hydrogen; quenching (thermal); silicon; silicon compounds; thin film transistors; Si:H, B-SiN ambipolar transistor; TFT; amorphous semiconductors; conductance; dangling bonds; electrical characteristics; field-effect mobility; n-channel operation; p-channel operations; quenching temperature; thermal quenching; thermally induced metastability; thin-film transistor; Charge carrier processes; Electric variables; Insulation; Metastasis; Optical films; Physics; Plasma temperature; Semiconductor films; Silicon; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.40957

Filename

40957