Title :
Electrical characteristics and thermally induced metastability in an amorphous-silicon ambipolar transistor
Author :
Jang, Jin ; Chu, Hye Yong ; Lee, Yi Sang ; Lee, Choochon
Author_Institution :
Dept. of Phys., Kyung Hee Univ., Seoul, South Korea
fDate :
12/1/1989 12:00:00 AM
Abstract :
Electrical characteristics and thermally induced metastability in a boron-doped hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) deposited at 180°C are discussed. The on/off ratio of the conductance and the field-effect mobility are similar to those for undoped a-Si:H TFTs. The device characteristics exhibit n- and p-channel operations. The enhancement in the drain currents caused by double injections of electrons and holes appears for the p-channel operation of the TFT. Thermal quenching experiments on boron-doped a-Si:H silicon-nitride ambipolar TFTs give clear evidence of the coexistence of two distinct metastable changes: the metastable creation of the active dopants and dangling bonds appear to increase with quenching temperature
Keywords :
amorphous semiconductors; boron; carrier mobility; dangling bonds; elemental semiconductors; hydrogen; quenching (thermal); silicon; silicon compounds; thin film transistors; Si:H, B-SiN ambipolar transistor; TFT; amorphous semiconductors; conductance; dangling bonds; electrical characteristics; field-effect mobility; n-channel operation; p-channel operations; quenching temperature; thermal quenching; thermally induced metastability; thin-film transistor; Charge carrier processes; Electric variables; Insulation; Metastasis; Optical films; Physics; Plasma temperature; Semiconductor films; Silicon; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
