Title :
The effect of interface states on amorphous-silicon transistors
Author :
Ibaraki, Nobuki ; Fukuda, Kaichi ; Takata, Hiroko
Author_Institution :
Toshiba Corp., Yokohama, Japan
fDate :
12/1/1989 12:00:00 AM
Abstract :
The properties of the interface where silicon nitride is deposited on top of a-Si:H have been investigated using two types of thin-film transistor (TFT) structure: a top-gate TFT with nitride gate dielectric and a bottom-gate TFT with a nitride passivation layer. TFT characteristics depend strongly on the nitride properties and the thickness of the a-Si:H, particularly at thicknesses less than 3000 Å. Results are interpreted in terms of the effect of interface states
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; interface electron states; passivation; silicon; silicon compounds; thin film transistors; Si:H-SiNx:H transistor; amorphous semiconductor; bottom-gate TFT; interface state effect; nitride passivation layer; thin-film transistor; top-gate TFT; Amorphous silicon; Dielectric substrates; Electron optics; Interface states; Optical films; Optical pumping; Optical sensors; Passivation; Semiconductor films; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
