DocumentCode
1114717
Title
Field-drifting resonant tunneling through a-Si:H/a-Si1-xCx:H quantum wells at different locations of the i-layer of a p-i-n structure
Author
Jiang, Yeu-Long ; Hwang, Huey-liang
Author_Institution
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Volume
36
Issue
12
fYear
1989
fDate
12/1/1989 12:00:00 AM
Firstpage
2816
Lastpage
2820
Abstract
The transport of photogenerated carriers perpendicular to the quantum wells in the p-i-n structure is discussed. The field-drifting resonant tunneling through the a-Si:H/a-Si1-xCx:H double-barrier (or three-barrier) quantum wells, located at different positions of the i-layer, was studied. The room-temperature resonant-tunneling behavior is observed when the quantum well structure is embedded in the middle second of the i-layer. The results provide further evidence of quantum size effects in amorphous-silicon-based superlattice structures
Keywords
amorphous semiconductors; electrical conductivity of amorphous semiconductors and insulators; elemental semiconductors; hydrogen; photoconductivity; semiconductor quantum wells; semiconductor superlattices; silicon; silicon compounds; tunnelling; Si:H-Si1-xCx:H quantum wells; amorphous semiconductor; field-drifting resonant tunneling; p-i-n structure; photogenerated carrier transport; quantum size effects; superlattice structures; Amorphous materials; Charge carrier processes; Helium; Hydrogen; Nonhomogeneous media; PIN photodiodes; Resonant tunneling devices; Silicon; Size control; Superlattices;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.40966
Filename
40966
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