• DocumentCode
    1114720
  • Title

    Optimum crystallographic orientation of submicrometer CMOS devices operated at low temperatures

  • Author

    Aoki, Masaaki ; Yano, Kazuo ; Masuhara, Toshiaki ; Ikeda, Syuji ; Meguro, Satoshi ; Aoki, Masaki ; Yano, Ken´ichi ; Masuhara, T. ; Ikeda, Shoji ; Meguro, Sakae

  • Author_Institution
    Hitachi Ltd., Kokubunji, Tokyo, Japan
  • Volume
    34
  • Issue
    1
  • fYear
    1987
  • fDate
    1/1/1987 12:00:00 AM
  • Firstpage
    52
  • Lastpage
    57
  • Abstract
    The dependence of submicrometer-channel CMOS performance on surface orientation is measured for LDD devices at both 300 and 77 K. Special emphasis is placed on determining the optimum crystalline plane for CMOS operating at low temperatures (CRYO-CMOS). A comparison of transistor parameters is experimentally made between
  • Keywords
    CMOS technology; Crystallization; Crystallography; Degradation; Energy consumption; Hot carriers; MOS devices; MOSFETs; Temperature dependence; Transconductance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22884
  • Filename
    1486595
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1114720