DocumentCode
1114770
Title
Frequency response of 1.3µm InGaAsP high speed semiconductor lasers
Author
Olshansky, Robert ; Hill, Paul ; Lanzisera, Vincent ; Powazinik, William
Author_Institution
GTE Laboratories,Waltham,MA
Volume
23
Issue
9
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
1410
Lastpage
1418
Abstract
The frequency response of a group of 1.3 μm InGaAsP vapor-phase-regrown buried heterostructure lasers of various cavity lengths is analyzed by fitting the measured response curves. The dependence of resonant frequency f0 and damping rate 
on bias power is determined. The differential gain coefficient for InGaAsP is determined as 
cm2. The damping rate is found to be proportional to the square of the resonant frequency with a proportionality factor which is independent of device geometry and facet reflectivity. The existence of such a universal relationship between and f0 and the observed magnitude of the damping rate is explained by the interband relaxation model of nonlinear gain.
on bias power is determined. The differential gain coefficient for InGaAsP is determined as cm2. The damping rate is found to be proportional to the square of the resonant frequency with a proportionality factor which is independent of device geometry and facet reflectivity. The existence of such a universal relationship between and fKeywords
Gallium materials/lasers; Laser resonators; Frequency measurement; Frequency response; Indium gallium arsenide; Laser modes; Laser noise; Masers; PIN photodiodes; Photodetectors; Semiconductor lasers; Velocity measurement;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1987.1073527
Filename
1073527
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