Title :
Two-dimensional impurity profiling with emission computed tomography techniques
Author :
Goodwin-johansson, Scott H. ; Subrahmanyan, Ravi ; Floyd, Carey E. ; Massoud, Hisham Z.
Author_Institution :
Duke Univ., Durham, NC, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
A technique for the determination of two-dimensional impurity profiles in silicon using methods for emission computed tomography is presented. Several one-dimensional impurity profiles obtained for different directions through the sample are used to reconstruct the two-dimensional profile. A simulation study of the experiment is described, and effects of various experimental and reconstruction parameters are discussed. Reconstructions of an area of 4 μm×4 μm from thirteen one-dimensional measurements, with a resolution of 1000 Å, are numerically possible
Keywords :
computerised tomography; diffusion in solids; doping profiles; electronic engineering computing; elemental semiconductors; impurity distribution; physics computing; semiconductor doping; silicon; 2D diffusion profile; Si; emission computed tomography techniques; one-dimensional measurements; reconstruction parameters; semiconductor doping; simulation; two-dimensional impurity profiles; Area measurement; Computational modeling; Computed tomography; Geometry; Helium; Impurities; Length measurement; Microelectronics; Solid modeling; Transmission electron microscopy;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
