A new model for the dual-gate GaAs MESFET

Author

Licqurish, Clint ; Howes, Michael J. ; Snowde, Christopher M.

Author_Institution

Dept. of Electr. & Electron. Eng., Leeds Univ., UK

Volume

37

Issue

10

fYear

1989

fDate

10/1/1989 12:00:00 AM

Firstpage

1497

Lastpage

1505

Abstract

The development of a novel GaAs dual-gate MESFET model suitable for the design and analysis of microwave circuits is described. This quasi-two-dimensional physical model is numerically efficient due to a unique formulation of the carrier transport equations. The model includes a comprehensive description of the geometric and material parameters accounting for recess structures, nonuniform doping profiles, current injection into the buffer layer, forward-biased gate conduction, and surface depletion. The accuracy of the model under DC, small-signal, and large-signal operating conditions is assessed by comparing simulated and measured performance

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; circuit analysis computing; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; DC operating conditions; GaAs; buffer layer; carrier transport equations; current injection; dual-gate MESFET model; forward-biased gate conduction; geometric parameters; large-signal operating conditions; material parameters; microwave circuit design; microwave circuits analysis; nonuniform doping profiles; quasi 2D model; quasi-two-dimensional physical model; recess structures; small-signal operating conditions; surface depletion; Circuit analysis; Conducting materials; Doping profiles; Equations; Gallium arsenide; MESFET circuits; Microwave circuits; Numerical models; Semiconductor process modeling; Solid modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.40992

Filename

40992