Extracting transistor changes from device simulations by gradient fitting

Author

Coughran, William M., Jr. ; Fichtner, Wolfgang ; Grosse, Eric

Author_Institution

AT&T Bell Labs., Murray Hill, NJ, USA

Volume

8

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

380

Lastpage

394

Abstract

The results of small-signal or transient analyses from a conventional device simulator (or measured data) can be combined with gradient-fitting techniques to produce smooth spline-based MOSFET charge models for circuit simulation. These techniques are also applicable to shape-from-shading problems. Results based on simulations of some small devices are presented. The comparative efficiencies of the small-signal and transient approach are discussed as well as the relation between the so-called small- and large-signal charges. The role of spline-based table models as against compact analytical models is considered

Keywords

circuit analysis computing; electronic engineering computing; insulated gate field effect transistors; semiconductor device models; splines (mathematics); transient response; MOSFET charge models; circuit simulation; device simulations; gradient fitting; shape-from-shading problems; small signal analysis; spline-based table models; transient analyses; transistor charges extractions; Analytical models; Capacitance; Charge carrier processes; Circuit simulation; Computational modeling; Data mining; Equations; MOSFETs; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.29592

Filename

29592