Title :
Intrinsic GaAs MESFET equivalent circuit models generated from two-dimensional simulations
Author :
Curtice, Walter R.
Author_Institution :
Microwave semicond. Corp., Somerset, NJ, USA
fDate :
4/1/1989 12:00:00 AM
Abstract :
An accurate, physically based two-dimensional GaAs MESFET model is used to generate small-signal and large-signal equivalent circuit models useful for the evaluation of GaAs device structures and GaAs integrated circuits. The models and the simulation techniques described provide a useful means of evaluating RF performance on the basis of the physical properties of the FET. As an example, the small- and large-signal device characteristics are evaluated as a function of drain-source bias voltage and lattice temperature for a 0.8-μm gate length FET. The small-signal results show severe degradation of frequency response with increase of drain-source bias voltage because of a high electric field in the conduction channel. The large-signal results show that the decrease in RF power capability with temperature increase is primarily due to declining current capability with temperature
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; field effect integrated circuits; gallium arsenide; semiconductor device models; 0.8 micron; GaAs; III-V semiconductors; MESFET; RF performance; RF power capability; conduction channel; device structures; drain-source bias voltage; equivalent circuit models; frequency response; gate length; high electric field; integrated circuits; large-signal device characteristics; lattice temperature; small-signal model; submicron FET; temperature increase; two-dimensional simulations; Circuit simulation; Equivalent circuits; FETs; Gallium arsenide; Integrated circuit modeling; MESFET circuits; MESFET integrated circuits; Radio frequency; Temperature; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
