Title :
1W at 617nm generation by intracavity frequency conversion in semiconductor disk laser
Author :
Rautiainen, J. ; Harkanen, A. ; Tuomisto, P. ; Konttinen, J. ; Orsila, L. ; Guina, M. ; Okhotnikov, O.G.
Author_Institution :
Tampere Univ. of Technol., Tampere
Abstract :
A 1234 nm GalnNAs/GaAs optically-pumped semiconductor disk laser utilising an intracavity BBO (beta barium borate) crystal for nonlinear frequency conversion is reported. 1 W of power at 617 nm has been achieved.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical frequency conversion; optical pumping; semiconductor lasers; GaInNAs-GaAs; intracavity frequency conversion; optical pumping; power 1 W; semiconductor disk laser; wavelength 1234 nm; wavelength 617 nm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20071654
