DocumentCode :
1115318
Title :
Gain-bandwidth-limited response in long-wavelength avalanche photodiodes
Author :
Forrest, Stephen R.
Author_Institution :
Bell Lab., Murray Hill, NJ, USA
Volume :
2
Issue :
1
fYear :
1984
fDate :
2/1/1984 12:00:00 AM
Firstpage :
34
Lastpage :
39
Abstract :
The gain-bandwidth(GB)-limited response of In0.53Ga0.47As/ InP heterostructure avalanche photodiodes (APD\´s) and related devices used in long-wavelength digital optical receivers is calculated. We find that these diodes, as currently designed, are useful at bit rates B l\\sim 2 Gbit/s when employed in conjunction with high-sensitivity optical receivers. Response at higher bit rates may be obtained depending on the details of device design. On the other hand, use of poor-quality receivers that require moderate-to-high values of optimum gain can significantly degrade the performance of heterostructure APD\´s at high bit rates due to GB limitations. We also show that APD receiver bandwidth can be expressed in terms of the sensitivity obtained using the receiver in conjunction with a p-i-n photodiode. It is found that the response speed of optimized receivers is lowest for an APD effective ionization rate ratio of k = 0.5 .
Keywords :
Avalanche photodiodes; Avalanche photodiodes; Bandwidth; Bit rate; Degradation; Indium phosphide; Optical design; Optical receivers; P-i-n diodes; PIN photodiodes; Performance gain;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1984.1073576
Filename :
1073576
Link To Document :
بازگشت