Title :
Validity of the quasi-transparent model of the current injected into heavily doped emitters of bipolar devices
Author :
Alamo, Jesus A del ; Swanson, Richarm M.
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi-shi, Kanagawa, Japan
fDate :
2/1/1987 12:00:00 AM
Abstract :
A simple criterion that permits one to assess the accuracy of the calculation of the current injected into a heavily doped emitter using the quasi-transparent model is presented. The criterion provides an upper limit of the error incurred by the approximation when compared to an exact computer solution, without requiring any additional calculations.
Keywords :
Accuracy; Analytical models; Bipolar transistors; Doping; Equations; Laboratories; Photovoltaic cells; Physics; Semiconductor process modeling; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.22945
