Simplified RF noise de-embedding method for on-wafer CMOS FET

A simplified RF noise de-embedding method for an on-wafer CMOS device using only one dummy structure for simplicity and area reduction is presented. The method describes the use of a ´thru´ test structure to subtract completely the parasitic effects of pads and in/out interconnections from the device under test. A comparison of the de-embedding results among the simplified method and existing de-embedding methods is given, which proves that the new method is effective, accurate and time efficient.