Title :
On the threshold Voltage of symmetrical DG MOS capacitor with intrinsic silicon body
Author :
Wong, Man ; Shi, Xuejie
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
Abstract :
An analytical expression explicitly relating the potential and the electric field at the oxide-semiconductor interface of a symmetrical double-gate oxide-intrinsic semiconductor-oxide system is derived. The expression is continuously applicable to all regimes of operation. The "turn-on" behavior of the system is studied and an "extrapolated" threshold voltage is uniquely defined. Opposite to the behavior of a conventional bulk metal-oxide-semiconductor capacitor realized on a doped substrate, this threshold voltage is shown to decrease with increasing oxide thickness.
Keywords :
MOS capacitors; silicon; Si; analytical solution; doped substrate; electric field; extrapolated threshold voltage; intrinsic silicon body; metal-oxide-semiconductor capacitor; oxide-semiconductor interface; symmetrical DG MOS capacitor; symmetrical double-gate oxide-intrinsic semiconductor-oxide system; turn-on behavior; Electric potential; Equations; FETs; Insulation; MOS capacitors; MOSFET circuits; Potential well; Silicon on insulator technology; Substrates; Threshold voltage; Analytical solution; DG; MOS; capacitor; double-gate; metal–oxide–semiconductor; threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2004.834901
