DocumentCode :
1115560
Title :
A novel technique to measure the contact resistance of a MOSFET
Author :
Ng, Kwok K.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
Volume :
34
Issue :
3
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
544
Lastpage :
547
Abstract :
A new technique is proposed to measure the contact resistance of a MOSFET by using a tester electrically converted from an existing MOSFET. Experiments have confirmed the applicability of this simple and easy technique. The attractiveness of this technique includes the ability to measure extremely low specific contact resistivity, and the capability of measurements on self-aligned silicided contacts.
Keywords :
Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Kelvin; MOSFET circuits; Probes; Testing; Transmission line theory; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.22961
Filename :
1486672
Link To Document :
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