Title :
A novel technique to measure the contact resistance of a MOSFET
Author_Institution :
AT&T Bell Laboratories, Murray Hill, NJ
fDate :
3/1/1987 12:00:00 AM
Abstract :
A new technique is proposed to measure the contact resistance of a MOSFET by using a tester electrically converted from an existing MOSFET. Experiments have confirmed the applicability of this simple and easy technique. The attractiveness of this technique includes the ability to measure extremely low specific contact resistivity, and the capability of measurements on self-aligned silicided contacts.
Keywords :
Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Kelvin; MOSFET circuits; Probes; Testing; Transmission line theory; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.22961