• DocumentCode
    1115560
  • Title

    A novel technique to measure the contact resistance of a MOSFET

  • Author

    Ng, Kwok K.

  • Author_Institution
    AT&T Bell Laboratories, Murray Hill, NJ
  • Volume
    34
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    544
  • Lastpage
    547
  • Abstract
    A new technique is proposed to measure the contact resistance of a MOSFET by using a tester electrically converted from an existing MOSFET. Experiments have confirmed the applicability of this simple and easy technique. The attractiveness of this technique includes the ability to measure extremely low specific contact resistivity, and the capability of measurements on self-aligned silicided contacts.
  • Keywords
    Conductivity; Contact resistance; Current measurement; Electrical resistance measurement; Kelvin; MOSFET circuits; Probes; Testing; Transmission line theory; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.22961
  • Filename
    1486672
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1115560