Efficient thermal modeling of SOI MOSFETs for fast dynamic operation

An efficient dynamic thermal model has been developed for silicon-on-insulator (SOI) MOSFETs. The model is derived from the variational principle using a thermal functional, and is able to describe extremely fast dynamic thermal behavior in SOI devices subjected to sudden changes in power generation. The developed model is further converted into a thermal circuit with time-varying thermal resistances and capacitances. With the circuit implemented in a circuit simulator, these time-varying thermal resistances and capacitances are able to reasonably capture extremely fast temperature evolution in SOI devices without including a large number of nodes. The developed dynamic thermal model and circuit are verified with the rigorous device simulation including self-heating.