Author :
Wu, D. ; Wang, H. ; Wu, B. ; Ni, H. ; Huang, S. ; Xiong, Y. ; Wang, P. ; Han, Q. ; Niu, Z. ; Tangring, I. ; Wang, S.M.
Abstract :
Very low threshold current density InGaAs/GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mum is centered at 1337.2 nm; the threshold current density is 205 A/cm2 at room temperature under continuous-wave operation.
Keywords :
III-V semiconductors; buffer layers; gallium arsenide; indium compounds; molecular beam epitaxial growth; quantum well lasers; InGaAs-GaAs; continuous-wave operation; metamorphic buffers; molecular beam epitaxy; quantum well laser diodes; ridge waveguide laser diode; size 1200 mum; wavelength 1337.2 nm;
