Patterned n+ implant into InP substrate for HBT subcollector

Author

Chen, Mary Y. ; Sokolich, Marko ; Chow, David H. ; Bui, Steven ; Royter, Yakov ; Hitko, Donald ; Thomas, Stephen, III ; Fields, Charles H. ; Rajavel, Rajesh D. ; Shi, Biqiang

Author_Institution

HRL Labs. LLC, Malibu, CA, USA

Volume

51

Issue

10

fYear

2004

Firstpage

1736

Lastpage

1742

Abstract

We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar quality to those on virgin InP. Maximum f_t and f_max of 240 and 310 GHz were obtained. We present the process flow, details of the ion implantation, layer characterization, and device results.

Keywords

III-V semiconductors; annealing; heterojunction bipolar transistors; indium compounds; ion implantation; molecular beam epitaxial growth; semiconductor epitaxial layers; substrates; 240 GHz; 310 GHz; HBT subcollector; InP; InP substrate; MBE; annealed substrates; heterojunction bipolar transistors; implanted substrates; ion implantation; layer characterization; molecular beam epitaxy; patterned n+ implant; semiconductor epitaxial layers; Atomic measurements; Capacitance; Heterojunction bipolar transistors; Implants; Indium phosphide; Ion implantation; Molecular beam epitaxial growth; Rapid thermal annealing; Semiconductor device doping; Substrates; HBTs; Heterojunction bipolar transistors; InP; MBE; ion implantation; molecular beam epitaxy; semiconductor epitaxial layers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2004.835024

Filename

1337190