DocumentCode :
1115727
Title :
Patterned n+ implant into InP substrate for HBT subcollector
Author :
Chen, Mary Y. ; Sokolich, Marko ; Chow, David H. ; Bui, Steven ; Royter, Yakov ; Hitko, Donald ; Thomas, Stephen, III ; Fields, Charles H. ; Rajavel, Rajesh D. ; Shi, Biqiang
Author_Institution :
HRL Labs. LLC, Malibu, CA, USA
Volume :
51
Issue :
10
fYear :
2004
Firstpage :
1736
Lastpage :
1742
Abstract :
We demonstrate molecular-beam epitaxy (MBE)-grown heterojunction bipolar transistors (HBTs) on InP substrates with a patterned implant n+ subcollector below the epitaxial layers. Device layers grown on implanted/annealed substrates were of similar quality to those on virgin InP. Maximum ft and fmax of 240 and 310 GHz were obtained. We present the process flow, details of the ion implantation, layer characterization, and device results.
Keywords :
III-V semiconductors; annealing; heterojunction bipolar transistors; indium compounds; ion implantation; molecular beam epitaxial growth; semiconductor epitaxial layers; substrates; 240 GHz; 310 GHz; HBT subcollector; InP; InP substrate; MBE; annealed substrates; heterojunction bipolar transistors; implanted substrates; ion implantation; layer characterization; molecular beam epitaxy; patterned n+ implant; semiconductor epitaxial layers; Atomic measurements; Capacitance; Heterojunction bipolar transistors; Implants; Indium phosphide; Ion implantation; Molecular beam epitaxial growth; Rapid thermal annealing; Semiconductor device doping; Substrates; HBTs; Heterojunction bipolar transistors; InP; MBE; ion implantation; molecular beam epitaxy; semiconductor epitaxial layers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2004.835024
Filename :
1337190
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1115727
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