Title :
Si-based receivers for optical data links
Author :
Jalali, B. ; Naval, L. ; Levi, A.F.J.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
We present results for GexSi1-x waveguide pin detectors grown by rapid thermal chemical vapor deposition (RTCVD). Detectors with multiple Ge0.29Si0.71 absorption layers show an internal quantum efficiency of 33% at λ=1.3 μm with a dark current of 27 pA/μm2. The external quantum efficiency is limited to 7% by the fiber-to-waveguide coupling efficiency. The output eye diagram for a hybrid λ=1.3 μm silicon receiver at 500 Mb/s is demonstrated. Prospects of a silicon-based optoelectronic receiver array technology are discussed
Keywords :
Ge-Si alloys; chemical vapour deposition; infrared detectors; optical links; optical receivers; optical waveguides; rapid thermal processing; semiconductor growth; semiconductor materials; 1.3 micron; 33 percent; 500 Mbit/s; 7 percent; Ge0.29Si0.71; GexSi1-x waveguide pin detectors; external quantum efficiency; fiber-to-waveguide coupling efficiency; internal quantum efficiency; multiple absorption layers; optical data links; output eye diagram; rapid thermal chemical vapor deposition; silicon-based optoelectronic receiver array; Absorption; Clocks; Costs; Fiber lasers; Frequency; High speed optical techniques; Optical interconnections; Optical receivers; Optical waveguides; Silicon;
Journal_Title :
Lightwave Technology, Journal of
