DocumentCode :
1115806
Title :
1 μm gate length, In0.75Ga0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm
Author :
Hill, R.J.W. ; Droopad, R. ; Moran, D.A.J. ; Li, X. ; Zhou, H. ; Macintyre, D. ; Thorns, S. ; Ignatova, O. ; Asenov, A. ; Rajagopalan, K. ; Fejes, P. ; Thayne, I.G. ; Passlack, M.
Author_Institution :
Univ. of Glasgow, Glasgow
Volume :
44
Issue :
7
fYear :
2008
Firstpage :
498
Lastpage :
500
Abstract :
The first demonstration of implant-free, flatband-mode In0.75Ga0.25As channel n-MOSFETs is reported. These 1 mum gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm /Vs and sheet carrier concentration of 3.3 times 10 cm-2 , utilise a Pt gate, a high-k dielectric (k sime 20), and a delta-doped InAlAs/InGaAs/InAlAs heterostructure. The devices have a typical maximum drive current (Id,sat) of 933 muA/mum, extrinsic transconductance (gm) of 737 muS/mum, gate leakage (Ig) of 40 pA, and on-resistance (Ron) of 555 Omega .mum. The gm and Ron figures of merit are the best reported to date for any III-V MOSFET.
Keywords :
MOSFET; In0.75Ga0.25As; current 40 pA; flatband-mode channel n-MOSFET; implant-free channel n-MOSFET; resistance 555 ohm; sheet carrier concentration; substrate; transconductance;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20080470
Filename :
4479566
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1115806
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