Title :
Errata to “High-Aspect-Ratio Structures for Efficient Light Absorption and Carrier Transport in InGaAs/GaAsP Multiple Quantum Well Solar Cells” [Apr 13 859-867]
Author :
Fujii, Hiromasa ; Wang, Yunpeng ; Watanabe, Kentaroh ; Sugiyama, Masakazu ; Nakano, Yoshiaki
Abstract :
We have found several errors in figures in the published article [ibid., vol. 3, no. 2, pp. 859-867, Apr. 2013). Corrections are presented here.
Keywords :
Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Quantum well devices; Tunneling;
Journal_Title :
Photovoltaics, IEEE Journal of
DOI :
10.1109/JPHOTOV.2014.2382980
