DocumentCode :
1115854
Title :
Raman amplification of 1.50-µm laser diode light in a low fiber loss region
Author :
Nakamura, K. ; Kimura, M. ; Yoshida, S. ; Hidaka, T. ; Mitsuhashi, Y.
Author_Institution :
Furukawa Electric Company, Ltd., Futaba, Shinagawa-ku, Tokyo, Japan
Volume :
2
Issue :
4
fYear :
1984
fDate :
8/1/1984 12:00:00 AM
Firstpage :
379
Lastpage :
381
Abstract :
Raman amplification utilizing the second Stokes line of 1.32-μm Nd:YAG laser light in a single-mode silica fiber was observed. Raman gains of 24 dB have been obtained for 1.50-μm laser diode light in the low-loss region. In addition, the signal-to-noise characteristics of Raman amplification using the second Stokes line was investigated. As a result, it became clear that the 
ratio was inferior to that in 1st Stokes line by about one order of magnitude.
ratio was inferior to that in 1st Stokes line by about one order of magnitude.Keywords :
Neodymium:YAG lasers; Optical fiber communication; Semiconductor lasers; Diode lasers; Fiber lasers; Frequency; Laser excitation; Neodymium; Optical fibers; Pump lasers; Raman scattering; Silicon compounds; Stimulated emission;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1984.1073626
Filename :
1073626
Link To Document :
