Title :
Switching characteristics of LD transceivers for optical TCM transmission
Author :
Yamada, Hiroki ; Sato, Kenji ; Okada, Kenji
Author_Institution :
NTT Transmission Syst. Labs., Kanagawa, Japan
fDate :
6/1/1994 12:00:00 AM
Abstract :
LD transceivers for a TCM (time-compression multiplexing) scheme are promising for bidirectional transmission and economical optical subscriber networks. This paper describes LD switching characteristics when cycling between transmitter and receiver states. An LD equivalent circuit model is discussed based on detailed observations of the LD discharge properties during switching operations. It Is confirmed that the LD current-blocking layers significantly affect switching characteristics. In addition, a “reverse-bias method” for high-speed switching is proposed
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical receivers; semiconductor lasers; transceivers; InGaAsP; InGaAsP buried heterostructure lasers; LD current-blocking layers; LD discharge properties; LD equivalent circuit model; bidirectional transmission; economical optical subscriber networks; high-speed switching; laser diode switching characteristics; laser diode transceivers; optical time-compression multiplexing transmission; receiver states; reverse-bias method; switching operations; transmitter states; Equivalent circuits; High speed optical techniques; Optical fiber networks; Optical receivers; Optical transmitters; Parasitic capacitance; Photodiodes; Switching circuits; Transceivers; Voltage;
Journal_Title :
Lightwave Technology, Journal of
