DocumentCode :
111595
Title :
Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain Reflectometry
Author :
Yonghun Kim ; Young Gon Lee ; Ukjin Jung ; Jin Ju Kim ; Minhyeok Choe ; Kyong Taek Lee ; Sangwoo Pae ; Jongwoo Park ; Byoung Hun Lee
Author_Institution :
Center for Emerging Electr. Devices & Syst., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
62
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1092
Lastpage :
1097
Abstract :
The effective mobility ( 
) of MOSFETs with ultrathin high- 
gate dielectric ( 
nm) has been successfully extracted using a time domain reflectometry method. A ground–signal–ground–ground probe configuration is used to analyze the gate-to-channel capacitance ( 
), gate-to-bulk capacitance ( 
), and total gate capacitance ( 
) without a complex RF test structure. Using this method, the effective mobility can be extracted even in the presence of a high gate leakage current ( 
A/cm 
) when the conventional split capacitance–voltage method using an impedance analyzer cannot be applied.
Keywords :
MOSFET; capacitance measurement; carrier mobility; high-k dielectric thin films; leakage currents; semiconductor device testing; time-domain reflectometry; effective mobility extraction; gate-to-bulk capacitance; gate-to-channel capacitance; ground-signal-ground-ground probe configuration; high gate leakage current; leaky gate dielectric; nMOSFET; size 0.85 nm; time domain reflectometry; total gate capacitance; ultrathin high-K gate dielectric; Capacitance; Dielectric measurement; Dielectrics; Logic gates; MOSFET; Probes; Transmission line measurements; Effective mobility; MOSFET; split capacitance???voltage ( $C$ ??? $V$ ); time domain reflectometry (TDR);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2404920
Filename :
7064866
Link To Document :
