Title :
An improved analytical AC large-signal model for the GaAs MESFET
Author_Institution :
Technion, Haifa, Israel
fDate :
10/1/1989 12:00:00 AM
Abstract :
An improved analytical AC large-signal model for a MESFET is presented. The model is an upgrading of a previously presented model. The improvement is basically in the expressions for the conduction current. Simulation results are presented and compared to measured data. The calculated gain and power are slightly greater than the measured values. This is expected, since the matching networks have some loss, which is not included in the calculation. The loss in the input matching network can be appreciable due to the large transformation ratio
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; AC large-signal model; GaAs; III-V semiconductors; MESFET; conduction current; gain; matching network loss; microwave devices; power; Accuracy; Algorithm design and analysis; Analytical models; Computational modeling; Ear; Gallium arsenide; Geometry; MESFETs; Microwave devices; Solid modeling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
