DocumentCode
1116003
Title
An improved analytical AC large-signal model for the GaAs MESFET
Author
Madjar, Asher
Author_Institution
Technion, Haifa, Israel
Volume
37
Issue
10
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
1519
Lastpage
1522
Abstract
An improved analytical AC large-signal model for a MESFET is presented. The model is an upgrading of a previously presented model. The improvement is basically in the expressions for the conduction current. Simulation results are presented and compared to measured data. The calculated gain and power are slightly greater than the measured values. This is expected, since the matching networks have some loss, which is not included in the calculation. The loss in the input matching network can be appreciable due to the large transformation ratio
Keywords
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; semiconductor device models; solid-state microwave devices; AC large-signal model; GaAs; III-V semiconductors; MESFET; conduction current; gain; matching network loss; microwave devices; power; Accuracy; Algorithm design and analysis; Analytical models; Computational modeling; Ear; Gallium arsenide; Geometry; MESFETs; Microwave devices; Solid modeling;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.40995
Filename
40995
Link To Document