Title :
Hot-electron-induced punchthrough (HEIP) effect in submicrometer PMOSFET´s
Author :
Koyanagi, Mitsumasa ; Lewis, Alan G. ; Martin, Russel A. ; Huang, Tiao-Yuan ; Chen, John Y.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, CA
fDate :
4/1/1987 12:00:00 AM
Abstract :
Degradation of device characterisitics due to hot-carrier injection in submicrometer PMOSFET has been investigated. We found that in submicrometer p-channel transistors the punchthrough voltage is seriously reduced due to hot-electon-induced punchthrough (HEIP). A worst case analysis of the experimental data shows substantially reduced lifetime due to HEIP.
Keywords :
CMOS integrated circuits; CMOS process; Degradation; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFET circuits; Stress measurement; Threshold voltage; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23004
