Scaling limits in batch-fabricated silicon pressure sensors

The scaling properties of silicon capacitive and piezoresistive pressure sensors are described. An evaluation of the various noise mechanisms and pressure offsets in the scaled devices is presented, including Brownian noise, electrical noise, electrostatic pressure variations and pressure offset due to resistor mismatch. The analysis of diaphragm deflection includes the effects of intrinsic stress and the transition from plate theory to membrane theory. Both ultraminiature and ultrasensitive sensors are considered. Ultraminiature piezoresistive sensors with diaphragms measuring 100 µm in length and resolving 1 mmHg should be possible using present technology as well as ultrasensitive capacitive sensors that resolve 1 µmHg.