DocumentCode :
1116132
Title :
A novel electromagnetic accelerometer
Author :
Abbaspour-Sani, Ebrahim ; Huang, Ruey-Shing ; Kwok, Chee Yee
Author_Institution :
Dept. of Electron., New South Wales Univ., Sydney, NSW, Australia
Volume :
15
Issue :
8
fYear :
1994
Firstpage :
272
Lastpage :
273
Abstract :
A novel micro-accelerometer based on electromagnetic field induction has been fabricated from Si <100> wafers using silicon micro machining techniques. For this design, measurements of acceleration ranging from 0-50 g have been experimentally demonstrated. The physical structure and a brief description of the fabrication process is given. The actual size of the device is 4.2/spl times/4.2 mm, its amplified output voltage varies linearly from 0-9 V with the rate of 0.175 V/g and the power consumption is less than 2.5 mW. Due to the simple structure a batch processing with on chip signal conditioning circuitry is possible. The required electronic circuitry compared to the capacitive accelerometers is much simpler.<>
Keywords :
accelerometers; electromagnetic devices; electromagnetic induction; elemental semiconductors; micromechanical devices; silicon; 0 to 9 V; 2.5 mW; Si; Si wafers; acceleration measurement; amplified output voltage; batch processing; electromagnetic accelerometer; electromagnetic field induction; fabrication process; micro machining techniques; micro-accelerometer; on chip signal conditioning circuitry; power consumption; Acceleration; Accelerometers; Circuits; Electromagnetic fields; Electromagnetic measurements; Energy consumption; Fabrication; Machining; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.296213
Filename :
296213
Link To Document :
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