Carrier number fluctuation model of 1/f noise in a semiconductor device

From Suh´s total carrier number fluctuation model of 1/f noise generation mechanism, a model that seems to be able to describe the behavior of 1/f noise in various semiconductor devices is presented. The model is formulated in a simple logical procedure without any ambiguous or obscure assumptions and expresses the voltage fluctuation spectral density and the current fluctuation spectral density in terms of the short-circuited channel current fluctuation spectral density. The obtained expressions seem to fit in various experimental results.