DocumentCode
1116152
Title
Submicron T-shaped gate HEMT fabrication using deep-UV lithography
Author
Chang, E.Y. ; Lin, K.C. ; Liu, E.H. ; Chang, C.Y. ; Chen, T.H. ; Chen, Jiann-Jong
Author_Institution
Inst. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
15
Issue
8
fYear
1994
Firstpage
277
Lastpage
279
Abstract
A new combination of low/high/low sensitivity tri-layer (PMMA/PMIPK/PMMA) resist system was used for deep UV lithography to-fabricate submicron T-shaped gate. Gate length as narrow as 0.2 μm is achieved. GaAs HEMTs with 0.3 μm T-shaped Ti/Pt/Au gate are fabricated using this technology. The HEMT demonstrated a 0.6 dB noise figure and 13 dB associated gain at 10 GHz. This deep UV lithography process provides a high throughput and low cost alternative to E-beam lithography for submicron T-gate fabrication.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; photolithography; semiconductor technology; solid-state microwave devices; 0.2 to 0.3 micron; 0.6 dB; 10 GHz; 13 dB; GaAs; HEMT fabrication; T-shaped Ti/Pt/Au gate; deep-UV lithography; gate length; submicron T-shaped gate HEMT; throughput; tri-layer PMMA/PMIPK/PMMA resist system; Costs; Fabrication; Gain; Gallium arsenide; Gold; HEMTs; Lithography; Noise figure; Resists; Throughput;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.296215
Filename
296215
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