Title :
Compact InAlAs–InGaAs Metal– Semiconductor– Metal Photodetectors Integrated on Silicon-on-Insulator Waveguides
Author :
Brouckaert, Joost ; Roelkens, Gunther ; Van Thourhout, Dries ; Baets, Roel
Author_Institution :
Ghent Univ.-Interuniv. Microelectron. Center (IMEC), Ghent
Abstract :
We present measurement results of compact and efficient InAlAs-InGaAs metal-semiconductor-metal photodetectors integrated on silicon-on-insulator (SOI) waveguides. These thin-film devices are heterogeneously integrated on the SOI substrate by means of low-temperature die-to-wafer bonding using divinyldisiloxane benzocyclobutene (DVS-BCB). The responsivity of a 30-mum-long detector is 1.0 A/W at a wavelength of 1550 nm and the dark current is 4.5 nA at a bias voltage of 5 V.
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical waveguides; photodetectors; silicon-on-insulator; wafer bonding; InAlAs-InGaAs; MSM photodetector; current 4.5 nA; dark current; detector responsivity; divinyldisiloxane benzocyclobutene; low-temperature die-to-wafer bonding; metal-semiconductor-metal photodetector; silicon-on-insulator waveguides; size 30 mum; thin-film devices; wavelength 1550 nm; Bonding; Dark current; Detectors; Photodetectors; Semiconductor thin films; Semiconductor waveguides; Silicon on insulator technology; Substrates; Thin film devices; Wavelength measurement; Heterogeneous integration; photodetector; photonic integrated circuit; silicon-on-insulator (SOI);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2007.903767
