DocumentCode :
1116189
Title :
Interpretation of forward bias behavior of Schottky barriers
Author :
Bennett, R.J.
Author_Institution :
The University, Canterbury, Kent, United Kingdom
Volume :
34
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
935
Lastpage :
937
Abstract :
Forward bias current flow behavior of Schottky barriers provides important information about the contact through the saturation current and ideality factor. These parameters are usually determined by graphically determining the linear region of a plot of log I against V. This method is subject to the difficulty of determining a linear region if the contact exhibits any series resistance. However, a method is developed that unambiguously determines the three parameters, saturation current, ideality factor, and series resistance using a method suitable for a microcomputer.
Keywords :
Breakdown voltage; Degradation; Doping; Electron devices; Performance analysis; Schottky barriers; Solid state circuits; Sun; Temperature distribution; Temperature sensors;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1987.23020
Filename :
1486731
Link To Document :
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