Title :
Interpretation of forward bias behavior of Schottky barriers
Author_Institution :
The University, Canterbury, Kent, United Kingdom
fDate :
4/1/1987 12:00:00 AM
Abstract :
Forward bias current flow behavior of Schottky barriers provides important information about the contact through the saturation current and ideality factor. These parameters are usually determined by graphically determining the linear region of a plot of log I against V. This method is subject to the difficulty of determining a linear region if the contact exhibits any series resistance. However, a method is developed that unambiguously determines the three parameters, saturation current, ideality factor, and series resistance using a method suitable for a microcomputer.
Keywords :
Breakdown voltage; Degradation; Doping; Electron devices; Performance analysis; Schottky barriers; Solid state circuits; Sun; Temperature distribution; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1987.23020