DocumentCode
1116189
Title
Interpretation of forward bias behavior of Schottky barriers
Author
Bennett, R.J.
Author_Institution
The University, Canterbury, Kent, United Kingdom
Volume
34
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
935
Lastpage
937
Abstract
Forward bias current flow behavior of Schottky barriers provides important information about the contact through the saturation current and ideality factor. These parameters are usually determined by graphically determining the linear region of a plot of log I against V. This method is subject to the difficulty of determining a linear region if the contact exhibits any series resistance. However, a method is developed that unambiguously determines the three parameters, saturation current, ideality factor, and series resistance using a method suitable for a microcomputer.
Keywords
Breakdown voltage; Degradation; Doping; Electron devices; Performance analysis; Schottky barriers; Solid state circuits; Sun; Temperature distribution; Temperature sensors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23020
Filename
1486731
Link To Document