• DocumentCode
    1116189
  • Title

    Interpretation of forward bias behavior of Schottky barriers

  • Author

    Bennett, R.J.

  • Author_Institution
    The University, Canterbury, Kent, United Kingdom
  • Volume
    34
  • Issue
    4
  • fYear
    1987
  • fDate
    4/1/1987 12:00:00 AM
  • Firstpage
    935
  • Lastpage
    937
  • Abstract
    Forward bias current flow behavior of Schottky barriers provides important information about the contact through the saturation current and ideality factor. These parameters are usually determined by graphically determining the linear region of a plot of log I against V. This method is subject to the difficulty of determining a linear region if the contact exhibits any series resistance. However, a method is developed that unambiguously determines the three parameters, saturation current, ideality factor, and series resistance using a method suitable for a microcomputer.
  • Keywords
    Breakdown voltage; Degradation; Doping; Electron devices; Performance analysis; Schottky barriers; Solid state circuits; Sun; Temperature distribution; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1987.23020
  • Filename
    1486731