DocumentCode
1116201
Title
A new technology for epitaxial II-VI compound semiconductor devices
Author
Jones, A.P.C. ; Wright, P.J. ; Brinkman, A.W. ; Russell, G.J. ; Woods, J. ; Cockayne, B.
Author_Institution
University of Durham, Durham, United Kingdom
Volume
34
Issue
4
fYear
1987
fDate
4/1/1987 12:00:00 AM
Firstpage
937
Lastpage
938
Abstract
ZnS and ZnSe are grown by metalorganic chemical-vapor deposition over GaAs and GaAlAs chemi-stop layers on a GaAs substrate. The III-V layers allow selective chemical removal of the substrate in order to expose the ZnS. The device allows investigation of the electrical and optical properties of epitaxial wide-gap II-VI compounds in the absence of any influence from the substrate material.
Keywords
Chemicals; Contacts; Epitaxial layers; Fabrication; Gallium arsenide; MIS devices; MOCVD; Semiconductor devices; Substrates; Zinc compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1987.23021
Filename
1486732
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